| PART |
Description |
Maker |
| MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
|
ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MTM45N05E MTP45N05E |
TMOS IV POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTP25N05E |
TMOS IV Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTP50N06V |
TMOS V?Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MGSF3455XT1 MGSF3455XT1-D MGSF3455XT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
Motorola, Inc.
ON Semiconductor
|
| MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTD3055E MTD3055E1 |
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount
|
Motorola, Inc
|
| MMDF4207 ON2189 MMDF4207-D |
TMOS Dual P-Channel Field Effect Transistors
From old datasheet system
Medium Power Surface Mount Products
|
ON Semiconductor
|
